Reaction and regrowth control of CeO2 on Si(111) surface for the silicon-on-insulator structure

T. Chikyow, S. M. Bedair, L. Tye, N. A. El-Masry

Research output: Contribution to journalArticlepeer-review

105 Citations (Scopus)

Abstract

The interface structure of CeO2/Si(111) grown by laser ablation in ultrahigh vacuum was investigated by, reflection high-energy electron diffraction (RHEED), high resolution transmission electron microscopy (HRTEM), and Auger electron spectroscopy (AES). The deposited film was single-crystalline CeO2. However, during the deposition, a reaction between CeO 2 and Si occurred at the interface, that resulted in the formation of an oxygen deficient amorphous CeO2-x and SiO2 layer. Post annealing in oxygen atmosphere caused the regrowth of crystalline CeO 2 from CeO2-x and increased of the SiO2 thickness. The modified structure of CeO2/SiO2/Si is expected to be useful as a silicon-on-insulator structure since it maintains the desirable SiO2/Si interface followed by a single-crystal insulating film lattice-matched to Si.

Original languageEnglish
Pages (from-to)1030-1032
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number8
DOIs
Publication statusPublished - 1994 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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