Re-entrant behavior of the v = 4/3 fractional quantum Hall effect in a front-and-back-gated 2D hole gas

K. Muraki, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The fractional quantum Hall (FQH) effect of a two-dimensional hole gas has been studied in a modulation-doped quantum well (QW) with front and back gates. We found that the v = 4/3 state shows intriguing re-entrant behavior; as the hole density was varied with the front gate, the v = 4/3 state was observed to weaken in two regions of magnetic field. Temperature-dependent measurements reveal that the energy gap Δ4/3 exhibits two minima as a function of magnetic field. This double re-entrant behavior contrasts markedly with the spin transition of electron systems which occurs around only one critical magnetic field. Results for different back-gate biases, i.e., for different Landau-level (LL) structures for the same density, are presented to discuss the effect of the valence-band LL structure.

Original languageEnglish
Pages (from-to)86-89
Number of pages4
JournalPhysica B: Condensed Matter
Volume256-258
DOIs
Publication statusPublished - 1998 Dec 2
Externally publishedYes

Keywords

  • Fractional quantum Hall effect
  • Quantum well
  • Spin
  • Two-dimensional hole gas

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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