RC delay reduction of 0.18 μm CMOS technology using low dielectric constant fluorinated amorphous carbon

Y. Matsubara, K. Kishimoto, K. Endo, M. Iguchi, T. Tatsumi, H. Gomi, T. Horiuchi, E. Tzou, M. Xi, L. Y. Cheng, D. Tribula, E. Moghadam

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

A low-k fluorinated amorphous carbon (a-C:F: dielectric constant 2.5) film as inter-metal dielectric (IMD) has been successfully integrated in 0.18-μm CMOS technology. The RC delay of a ring oscillator with loaded wiring (length: 10 mm) is reduced by 22% using an a-C:F IMD compared with that using a SiO2 IMD. The thermal stability problems from integrating a-C:F IMD with a W plug (deposition temperature: 370 °C, film stress: 1.5×1010dyne/cm2) can be overcome using post a-C:F deposition anneal. This leads to less a-C:F outgassing at temperatures up to 375 °C.

Original languageEnglish
Pages (from-to)841-843
Number of pages3
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1998 Dec 61998 Dec 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Matsubara, Y., Kishimoto, K., Endo, K., Iguchi, M., Tatsumi, T., Gomi, H., Horiuchi, T., Tzou, E., Xi, M., Cheng, L. Y., Tribula, D., & Moghadam, E. (1998). RC delay reduction of 0.18 μm CMOS technology using low dielectric constant fluorinated amorphous carbon. Technical Digest - International Electron Devices Meeting, 841-843.