TY - JOUR
T1 - Rational Design of Fluorinated Phthalonitrile/Hollow Glass Microsphere Composite with Low Dielectric Constant and Excellent Heat Resistance for Microelectronic Packaging
AU - Wu, Minjie
AU - Han, Wenshuang
AU - Zhang, Chun
AU - Zhang, Shuo
AU - Zhang, Xinyang
AU - Chen, Xinggang
AU - Naito, Kimiyoshi
AU - Yu, Xiaoyan
AU - Zhang, Qingxin
N1 - Funding Information:
This research was funded by National Natural Science Foundation of China, grant number 51573037 and Natural Science Foundation of Hebei Province, China, grant number E2021202035 and E2019202348.
Publisher Copyright:
© 2022 by the authors.
PY - 2022/11
Y1 - 2022/11
N2 - High-performance composites with a resin matrix are urgently required for electronic packaging due to their low dielectric constant, outstanding high temperature resistance, excellent corrosion resistance, light weight and easy molding. In this work, hollow-glass-microsphere (HGM)-filled fluorinated-phthalonitrile (PBDP) composites, with filler contents ranging from 0 to 35.0 vol.%, were prepared in order to modify the dielectric properties of the phthalonitrile. Scanning electron microscopy (SEM) observations indicate that the modified HGM particles were uniformly dispersed in the matrix. The PBDP/27.5HGM-NH2 composite demonstrates a low dielectric constant of 1.85 at 12 GHz. The 5% thermogravimetric temperature (T5) of composites with silanized HGM filler (481–486 °C) is higher than the minimum packaging-material requirements (450 °C). In addition, the heat-resistance index (THRI) of PBDP/HGM-NH2 composites reached as high as 268 °C. the storage modulus of PBDP/HGM-NH2 composites were significantly increased to 1283 MPa at 400 °C, an increase by 50%, in comparison to that of PBDP phthalonitrile resin (857 MPa). The excellent dielectric and thermal properties of the present composites may pave a way for comprehensive applications in electronic packaging and thermal management for energy systems.
AB - High-performance composites with a resin matrix are urgently required for electronic packaging due to their low dielectric constant, outstanding high temperature resistance, excellent corrosion resistance, light weight and easy molding. In this work, hollow-glass-microsphere (HGM)-filled fluorinated-phthalonitrile (PBDP) composites, with filler contents ranging from 0 to 35.0 vol.%, were prepared in order to modify the dielectric properties of the phthalonitrile. Scanning electron microscopy (SEM) observations indicate that the modified HGM particles were uniformly dispersed in the matrix. The PBDP/27.5HGM-NH2 composite demonstrates a low dielectric constant of 1.85 at 12 GHz. The 5% thermogravimetric temperature (T5) of composites with silanized HGM filler (481–486 °C) is higher than the minimum packaging-material requirements (450 °C). In addition, the heat-resistance index (THRI) of PBDP/HGM-NH2 composites reached as high as 268 °C. the storage modulus of PBDP/HGM-NH2 composites were significantly increased to 1283 MPa at 400 °C, an increase by 50%, in comparison to that of PBDP phthalonitrile resin (857 MPa). The excellent dielectric and thermal properties of the present composites may pave a way for comprehensive applications in electronic packaging and thermal management for energy systems.
KW - electronic packaging
KW - fluorinated phthalonitrile
KW - hollow glass microsphere
KW - low dielectric constant
KW - thermal mechanical properties
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U2 - 10.3390/nano12223973
DO - 10.3390/nano12223973
M3 - Article
AN - SCOPUS:85142421271
SN - 2079-4991
VL - 12
JO - Nanomaterials
JF - Nanomaterials
IS - 22
M1 - 3973
ER -