Rashba spin-orbit interaction of in0.53Ga0.47As/ In0.7Ga0.3As/In0.53Ga0.47As shallow two-dimensional electron gas by surface etching

Yoji Kunihashi; Takayuki Nihei; Makoto Koda; Junsaku Nitta

doi:10.1002/pssc.200776557

Rashba spin-orbit interaction of in_0.53Ga_0.47As/ In_0.7Ga_0.3As/In_0.53Ga_0.47As shallow two-dimensional electron gas by surface etching

Yoji Kunihashi, Takayuki Nihei, Makoto Koda, Junsaku Nitta

ENG - Materials Science

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

We have investigated Rashba spin-orbit interaction (SOI) of In _0.53Ga_0.47As/In_0.7Ga_0.3As/In _0.53Ga_0.47As two-dimensional electron gas (2DEG) located below 6.4 nm - 26.5 nm from the sample surface by analyzing weak antilocalization (WAL). Depth of the 2DEG from the sample surface is systematically controlled by surface etching within the identical samples. WAL is enhanced as increasing the etching depth due to the large energy-band bending of In_0.53Ga_0.47As/In_0.7Ga_0.3As/ In_0.53Ga_0.47As quantum well. The Rashba SOI parameter α increases with increasing the etching depth, and 2.41 × 10 ^-12 eVm is obtained in the shallowest 2DEG which is located below 6.4 nm from the surface. Calculated α from the k · p formalism shows good agreement on the surface etching dependence with the experimental values. Dominant contribution of the Rashba SOI parameter α is originated from the In_0.53Ga_0.47As/In_0.7Ga_0.3As heterointerface as well as the energy-band bending in the In _0.7Ga_0.3As quantum well.

Original language	English
Pages (from-to)	322-325
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200776557
Publication status	Published - 2008 Jan 1
Event	15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan Duration: 2007 Jul 23 → 2007 Jul 27

ASJC Scopus subject areas

Condensed Matter Physics

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Rashba spin-orbit interaction of in_0.53Ga_0.47As/ In_0.7Ga_0.3As/In_0.53Ga_0.47As shallow two-dimensional electron gas by surface etching. / Kunihashi, Yoji; Nihei, Takayuki; Koda, Makoto ; Nitta, Junsaku.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 1, 01.01.2008, p. 322-325.

Research output: Contribution to journal › Conference article › peer-review

@article{605f7793f7724c7f81f53242e9b30c43,

title = "Rashba spin-orbit interaction of in0.53Ga0.47As/ In0.7Ga0.3As/In0.53Ga0.47As shallow two-dimensional electron gas by surface etching",

abstract = "We have investigated Rashba spin-orbit interaction (SOI) of In 0.53Ga0.47As/In0.7Ga0.3As/In 0.53Ga0.47As two-dimensional electron gas (2DEG) located below 6.4 nm - 26.5 nm from the sample surface by analyzing weak antilocalization (WAL). Depth of the 2DEG from the sample surface is systematically controlled by surface etching within the identical samples. WAL is enhanced as increasing the etching depth due to the large energy-band bending of In0.53Ga0.47As/In0.7Ga0.3As/ In0.53Ga0.47As quantum well. The Rashba SOI parameter α increases with increasing the etching depth, and 2.41 × 10 -12 eVm is obtained in the shallowest 2DEG which is located below 6.4 nm from the surface. Calculated α from the k · p formalism shows good agreement on the surface etching dependence with the experimental values. Dominant contribution of the Rashba SOI parameter α is originated from the In0.53Ga0.47As/In0.7Ga0.3As heterointerface as well as the energy-band bending in the In 0.7Ga0.3As quantum well.",

author = "Yoji Kunihashi and Takayuki Nihei and Makoto Koda and Junsaku Nitta",

year = "2008",

month = jan,

day = "1",

doi = "10.1002/pssc.200776557",

language = "English",

volume = "5",

pages = "322--325",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "1",

note = "15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 ; Conference date: 23-07-2007 Through 27-07-2007",

}

TY - JOUR

T1 - Rashba spin-orbit interaction of in0.53Ga0.47As/ In0.7Ga0.3As/In0.53Ga0.47As shallow two-dimensional electron gas by surface etching

AU - Kunihashi, Yoji

AU - Nihei, Takayuki

AU - Koda, Makoto

AU - Nitta, Junsaku

PY - 2008/1/1

Y1 - 2008/1/1

N2 - We have investigated Rashba spin-orbit interaction (SOI) of In 0.53Ga0.47As/In0.7Ga0.3As/In 0.53Ga0.47As two-dimensional electron gas (2DEG) located below 6.4 nm - 26.5 nm from the sample surface by analyzing weak antilocalization (WAL). Depth of the 2DEG from the sample surface is systematically controlled by surface etching within the identical samples. WAL is enhanced as increasing the etching depth due to the large energy-band bending of In0.53Ga0.47As/In0.7Ga0.3As/ In0.53Ga0.47As quantum well. The Rashba SOI parameter α increases with increasing the etching depth, and 2.41 × 10 -12 eVm is obtained in the shallowest 2DEG which is located below 6.4 nm from the surface. Calculated α from the k · p formalism shows good agreement on the surface etching dependence with the experimental values. Dominant contribution of the Rashba SOI parameter α is originated from the In0.53Ga0.47As/In0.7Ga0.3As heterointerface as well as the energy-band bending in the In 0.7Ga0.3As quantum well.

AB - We have investigated Rashba spin-orbit interaction (SOI) of In 0.53Ga0.47As/In0.7Ga0.3As/In 0.53Ga0.47As two-dimensional electron gas (2DEG) located below 6.4 nm - 26.5 nm from the sample surface by analyzing weak antilocalization (WAL). Depth of the 2DEG from the sample surface is systematically controlled by surface etching within the identical samples. WAL is enhanced as increasing the etching depth due to the large energy-band bending of In0.53Ga0.47As/In0.7Ga0.3As/ In0.53Ga0.47As quantum well. The Rashba SOI parameter α increases with increasing the etching depth, and 2.41 × 10 -12 eVm is obtained in the shallowest 2DEG which is located below 6.4 nm from the surface. Calculated α from the k · p formalism shows good agreement on the surface etching dependence with the experimental values. Dominant contribution of the Rashba SOI parameter α is originated from the In0.53Ga0.47As/In0.7Ga0.3As heterointerface as well as the energy-band bending in the In 0.7Ga0.3As quantum well.

UR - http://www.scopus.com/inward/record.url?scp=45749152910&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45749152910&partnerID=8YFLogxK

U2 - 10.1002/pssc.200776557

DO - 10.1002/pssc.200776557

M3 - Conference article

AN - SCOPUS:45749152910

VL - 5

SP - 322

EP - 325

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 1

T2 - 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15

Y2 - 23 July 2007 through 27 July 2007

ER -