Rashba spin-orbit interaction in a MgxZn1-xO/ZnO two-dimensional electron gas studied by electrically detected electron spin resonance

Y. Kozuka, S. Teraoka, J. Falson, A. Oiwa, A. Tsukazaki, S. Tarucha, M. Kawasaki

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report the experimental determination of Rashba spin-orbit interaction (SOI) strength in two-dimensional electrons in a MgZnO/ZnO heterostructure using electrically detected electron spin resonance. The Rashba parameter is determined to be 7.0×10-14 eV m, which is the second smallest value among prevalent semiconductor heterostructures, following Si/SiGe. A long transverse spin relaxation time was derived to show a maximum value of 27 ns, owing to weak SOI. Our study demonstrates that the ZnO heterostructure is a promising candidate for spintronic devices utilizing long spin coherence.

Original languageEnglish
Article number205411
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number20
DOIs
Publication statusPublished - 2013 May 7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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