Rapid terahertz imaging of carrier density of 3C-SiC

Akihide Hamano, Seigo Ohno, Hiroaki Minamide, Hiromasa Ito, Yoshiyuki Usuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The reflectance around the longitudinal optical (LO) phonon frequency in the terahertz region changes with the carrier density of silicon carbide (SiC), while the reflectance around the transverse optical (TO) phonon frequency remains constantly high. The relative reflectance obtained from the reflectance at the two frequencies related to the TO and LO phonon was evaluated as a function of the carrier density of SiC. Two waves around these phonon frequencies can be generated easily using a tunable terahertz source. Nondestructive imaging of the carrier density of cubic SiC (3C-SiC) at the rate of 1 s per point was carried out successfully using this tunable terahertz source.

Original languageEnglish
Title of host publicationDefects-Recognition, Imaging and Physics in Semiconductors XIV
PublisherTrans Tech Publications Ltd
Pages57-60
Number of pages4
ISBN (Print)9783037854426
DOIs
Publication statusPublished - 2012
Event14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan
Duration: 2011 Sep 252011 Sep 29

Publication series

NameMaterials Science Forum
Volume725
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
CountryJapan
CityMiyazaki
Period11/9/2511/9/29

Keywords

  • Carrier density
  • Nondestructive imaging
  • Silicon carbide
  • Terahertz

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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