Rapid synthesis of Zn3(VO4)2 phosphor film on quartz substrate by RF magnetron sputtering and rapid thermal processing

Tomoyuki Kawashima, Katsuyoshi Washio

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The near-ultraviolet excited Zn3(VO4)2 phosphor film on a quartz substrate was fabricated by RF magnetron sputter deposition of the film at 150 °C or room temperature and subsequent rapid thermal calcination at 600–900 °C. The phosphor film exhibited a broad emission spectrum with a peak at 567 nm and a FWHM of 186 nm. The highest internal quantum efficiency of 45% was obtained after 800 °C calcination of the 150 °C-deposited film with a Zn/V molar ratio of 1.9. The 800 °C calcination promoted a thermal coalescence and effectively reduced surface traps of Zn3(VO4)2 particles. Zn3(VO4)2 was thermally decomposed into Zn4V2O9 and Zn2V2O7 at 900 °C, and the quantum efficiency decreased drastically as a consequence.

Original languageEnglish
Pages (from-to)9267-9271
Number of pages5
JournalCeramics International
Volume43
Issue number12
DOIs
Publication statusPublished - 2017 Aug 15

Keywords

  • Phosphor
  • RF magnetron sputtering
  • Rapid thermal calcination
  • Thin film
  • Zn(VO)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Rapid synthesis of Zn<sub>3</sub>(VO<sub>4</sub>)<sub>2</sub> phosphor film on quartz substrate by RF magnetron sputtering and rapid thermal processing'. Together they form a unique fingerprint.

Cite this