Rapid synthesis of yttria-partially-stabilized zirconia films by metal-organic chemical vapor deposition

Rong Tu, Teiichi Kimura, Takashi Goto

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)

Abstract

Yttria-partially-stabilized zirconia (YPSZ) films were synthesized on Hastelloy-XR as thermal barrier coatings (TBC) at a high deposition rate of 100 μm h-1 (2.8 × 10-8 ms-1) by metal-organic chemical vapor deposition (MOCVD) using Zr(dpm)4 and Y(dpm)3 precursors. The deposition rate of 100 μm h-1 was the highest among the reported values for YPSZ films by CVD. The YPSZ films were columnar morphology and (200) oriented with a tetragonal structure.

Original languageEnglish
Pages (from-to)2354-2356
Number of pages3
JournalMaterials Transactions
Volume43
Issue number9
DOIs
Publication statusPublished - 2002 Sep

Keywords

  • Hastelloy-XR
  • High deposition rate
  • Metal-organic chemical vapor deposition
  • Thermal barrier coatings
  • Yttria-partially-stabilized zirconia

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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