Rapid measurement of seebeck coefficient by an AC method

Takashi Goto, Jianhui Li, Toshio Hirai, Yukio Maeda, Ryozo Kato, Akikazu Maesono

Research output: Contribution to journalArticle

Abstract

An ac method for the measurement of the Seebeck coefficient was developed. Specimens were heated periodically at frequencies in the range 0.2 - 10 Hz using a semiconductor laser. The small temperature increase and the resultant thermoelectric power were measured with a Pt-Pt13%Rh thermocouple (25 μm in diameter) through a lock-in amplifier. The Seebeck coefficient of a Pt90Rh10 foil measured by the ac method was in agreement with that obtained from the standard table. The optimum frequency and specimen thickness for the ac method were 0.2 Hz and 0.1 - 0.2 mm, respectively. The Seebeck coefficients of silicon single crystal and several thermoelectric semiconductors (Si80Ge20, PbTe, FeSi2, SiB14) measured by the ac method agreed with those measured by a conventional dc method in the temperature range between room temperature and 1200 K. The time needed for each measurement was less than a few tens of minutes, significantly shorter than that for a conventional dc method.

Original languageEnglish
Pages (from-to)65-69
Number of pages5
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume44
Issue number1
DOIs
Publication statusPublished - 1997 Jan 1

Keywords

  • Platinum-rhodium alloy
  • Seebeck coefficient
  • Silicon-germanium alloy
  • Thermoelectricity
  • ac method

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry

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