Rapid imaging of carrier density of Si using reflectance measurement in the terahertz region

Akihide Hamano, Yoshinobu Takatsu, Seigo Ohno, Hiroaki Minamide, Hiromasa Ito, Yoshiyuki Usuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Rapid imaging of the carrier density of n-type silicon (Si) was carried out at the rate of 2 s per point using a terahertz wave of 4.4 THz generated from a tun able terahertz source. Reflectance of 4.4 THz as a function of carrier density was calculated using a simple Drude model. The carrier densities obtained from the terahertz imaging were 1 × 1018 cm-3 and 3 × 1018 cm-3, respectively.

Original languageEnglish
Title of host publicationDefects-Recognition, Imaging and Physics in Semiconductors XIV
PublisherTrans Tech Publications Ltd
Pages227-230
Number of pages4
ISBN (Print)9783037854426
DOIs
Publication statusPublished - 2012 Jan 1
Event14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan
Duration: 2011 Sep 252011 Sep 29

Publication series

NameMaterials Science Forum
Volume725
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
CountryJapan
CityMiyazaki
Period11/9/2511/9/29

Keywords

  • Carrier density
  • Imaging
  • Silicon
  • Terahertz

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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