Rapid growth of ultra-long Al whiskers from TiN/Al/Si island structures

Thomas Heinrich Ludwig, Hironori Tohmyoh

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


This paper aims to fabricate longer Al whiskers with shorter heating time by using stress-induced migration. The island structure sample, which consists of a rectangular Al thin film on a Si wafer covered with a TiN layer, is heated for rapid growth of Al whiskers. Unique, compressive stress distribution in the Al thin film from the center to the edge of islands during the heating contributes to whisker growth. Si diffusion into the Al thin film during heating promotes atomic diffusion. In order to obtain longer whiskers, a lower heating temperature of 300 °C was found to be better than 500 °C. As a result, a longer Al whisker of approximately 0.5 mm was obtained for 3 h heating time.

Original languageEnglish
Article number126311
JournalJournal of Crystal Growth
Publication statusPublished - 2021 Nov 15


  • A1. Diffusion
  • A1. Growth models
  • A1. Low dimensional structures
  • A2. Single crystal growth
  • B1. Metals

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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