TY - JOUR
T1 - Rapid growth of ultra-long Al whiskers from TiN/Al/Si island structures
AU - Ludwig, Thomas Heinrich
AU - Tohmyoh, Hironori
N1 - Funding Information:
The authors would like to acknowledge Professor Emeritus M. Saka for his valuable discussions on this work, as well as Dr. Nagasako and Dr. Takenaka for their technical support in TEM analysis. This work was supported by JSPS KAKENHI Grant Number 18H01331.
Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2021/11/15
Y1 - 2021/11/15
N2 - This paper aims to fabricate longer Al whiskers with shorter heating time by using stress-induced migration. The island structure sample, which consists of a rectangular Al thin film on a Si wafer covered with a TiN layer, is heated for rapid growth of Al whiskers. Unique, compressive stress distribution in the Al thin film from the center to the edge of islands during the heating contributes to whisker growth. Si diffusion into the Al thin film during heating promotes atomic diffusion. In order to obtain longer whiskers, a lower heating temperature of 300 °C was found to be better than 500 °C. As a result, a longer Al whisker of approximately 0.5 mm was obtained for 3 h heating time.
AB - This paper aims to fabricate longer Al whiskers with shorter heating time by using stress-induced migration. The island structure sample, which consists of a rectangular Al thin film on a Si wafer covered with a TiN layer, is heated for rapid growth of Al whiskers. Unique, compressive stress distribution in the Al thin film from the center to the edge of islands during the heating contributes to whisker growth. Si diffusion into the Al thin film during heating promotes atomic diffusion. In order to obtain longer whiskers, a lower heating temperature of 300 °C was found to be better than 500 °C. As a result, a longer Al whisker of approximately 0.5 mm was obtained for 3 h heating time.
KW - A1. Diffusion
KW - A1. Growth models
KW - A1. Low dimensional structures
KW - A2. Single crystal growth
KW - B1. Metals
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U2 - 10.1016/j.jcrysgro.2021.126311
DO - 10.1016/j.jcrysgro.2021.126311
M3 - Article
AN - SCOPUS:85114730155
VL - 574
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
M1 - 126311
ER -