Pb(Zr 0.32 Ti 0.48 )O 3 (PZT) thin films were coated onto Pt/Ti/SiO 2 /Si substrates by a sol-gel method and then crystallized by 2.45 GHz microwave irradiation in a magnetic field. The crystalline phases and microstructures as well as the electrical properties of the microwave-irradiated PZT films were investigated as a function of the elevated temperature generated by microwave irradiation. The perovskite PZT thin films with good electrical properties could be obtained by microwave irradiation at 650°C for 60 s. The average values of the remanent polarization and the coercive field of the PZT films were approximately 27 μC/cm 2 and 95 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.18, respectively. It is clear that microwave irradiation is effective for obtaining well-crystallized PZT films with good properties in a short process time.
- Electrical properties
- Lead zirconate titanate (PZT)
- Microwave irradiation
ASJC Scopus subject areas
- Physics and Astronomy(all)