Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach

T. Fukumura, M. Ohtani, M. Kawasaki, Y. Okimoto, T. Kageyama, T. Koida, T. Hasegawa, Y. Tokura, H. Koinuma

Research output: Contribution to journalArticlepeer-review

159 Citations (Scopus)

Abstract

We propose a method of rapid construction of a structural-magnetic-electronic phase diagram of doped Mott insulators. The composition-spread method is utilized for fabricating a film whose doping concentration varies from 0 to 1 continuously. The concurrent x-ray diffractometer that measures x-ray diffraction spectra of all the composition simultaneously, the scanning superconducting quantum interference device microscope, and the infrared optical spectroscopy are employed for characterizing the film. A demonstration is given for a colossal magnetoresistive material, La1-xSrxMnO3.

Original languageEnglish
Pages (from-to)3426-3428
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number21
DOIs
Publication statusPublished - 2000 Nov 20
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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