Raman-scattering spectroscopy of epitaxial graphene formed on SiC film on Si substrate

Yu Miyamoto, Hiroyuki Handa, Eiji Saitoh, Atsushi Konno, Yuzuru Narita, Maki Suemitsu, Hirokazu Fukidome, Takashi Ito, Kanji Yasui, Hideki Nakazawa, Tetsuo Endoh

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)


By conducting a, 1200°C vacuum annealing of a 3C-SiC(111) ultrathin film preformed on a Si(110) surface, we have succeeded in forming a, graphene layer on a, Si substrate. Raman-scattering spectrum from this surface presents a distinct 2D band, whose deconvolution into four subcomponents indicates that the film mostly consists of a two-layer graphene. The peak position is blue-shifted from that of a free-standing graphene formed by a

Original languageEnglish
Pages (from-to)107-109
Number of pages3
Journale-Journal of Surface Science and Nanotechnology
Publication statusPublished - 2009 Jan 10


  • Gas-source MBE
  • Graphene
  • Heteroepitaxy
  • Organosilane
  • Silicon carbide

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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