Raman scattering determination of carrier distribution in GaP diodes

S. Nakashima, H. Yugami, A. Fujii, M. Hangyo, H. Yamanaka

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Using a Raman microscope we have studied Raman scattering from plasmon-LO-phonon coupled modes in the cross section of GaP diodes. The line shape analysis of the coupled mode has provided the thermal-equilibrium carrier concentration and mobility. Their distribution is determined from the spatial variation of the spectra. The carrier distribution thus obtained is consistent with that estimated from capacitance measurements. The result demonstrates that the Raman microprobe is a powerful method for determining the distribution of the carrier concentration and mobility in semiconductor devices without electric measurements using electrodes.

Original languageEnglish
Pages (from-to)3067-3071
Number of pages5
JournalJournal of Applied Physics
Volume64
Issue number6
DOIs
Publication statusPublished - 1988 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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