Raman-scattering characterization of InN films grown by pressurized metal organic vapor phase epitaxy

Jung Gon Kim, Yasuhito Kamei, Atsuhito Kimura, Noriyuki Hasuike, Hiroshi Harima, Kenji Kisoda, Yu Huai Liu, Takashi Matsuoka

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Improvement of hexagonal InN film quality grown by metal-organic vapor phase epitaxy has been challenged by changing the ambient-gas pressure in 87-320kPa (~1-3atm.). The growth temperature and the source-gas supply ratio, the so-called V/III ratio, were optimized at each ambient-gas pressure to improve the film quality. Raman scattering characterization of InN phonon spectra showed great improvement in crystalline quality by increasing the pressure from 87 to 213kPa, and furthermore to 320kPa. This tendency was also confirmed by a structural characterization by X-ray diffraction.

Original languageEnglish
Pages (from-to)779-783
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume249
Issue number4
DOIs
Publication statusPublished - 2012 Apr

Keywords

  • Crystalline quality
  • High pressures
  • Indium nitride
  • Raman scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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