Raman characterization of ABA- and ABC-stacked trilayer graphene

Chunxiao Cong, Ting Yu, Kentaro Sato, Jingzhi Shang, Riichiro Saito, Gene F. Dresselhaus, Mildred S. Dresselhaus

Research output: Contribution to journalArticlepeer-review

144 Citations (Scopus)

Abstract

Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G' (2D) band, and the intermediate-frequency combination modes of 3LGs are sensitive to the stacking order of 3LG. The phonon wavevector q, that gives the double resonance Raman spectra is larger in ABC than ABA, which is the reason why we get the different Raman frequencies and their spectral widths for ABA and ABC 3LG. The weak electron-phonon interaction in ABC-stacked 3LG and the localized strain at the boundary between ABC- and ABA-stacked domains are clearly reflected by the softening of the G mode and the G' mode, respectively.

Original languageEnglish
Pages (from-to)8760-8768
Number of pages9
JournalACS Nano
Volume5
Issue number11
DOIs
Publication statusPublished - 2011 Nov 22

Keywords

  • Raman scattering
  • double resonance Raman spectroscopy
  • electron-phonon interaction
  • graphene
  • stacking order

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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