Raman and XPS studies of CIGS/Mo interfaces under various annealing temperatures

Junfeng Han, Liangqi Ouyang, Daming Zhuang, Cheng Liao, Jiang Liu, Ming Zhao, Li Mei Cha, M. P. Besland

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

In this work, copper indium gallium selenide (CIGS) thin films were prepared by sputtering CIGS quaternary target and subsequent annealing in the 450-550 °C range. For analyses purpose, the films were peeled off from Mo-coated glass and both parts were named as 'CIGS side' and 'Mo side' respectively. Raman spectroscopy and X-Ray Photoelectron Spectroscopy (XPS) were performed to identify crystalline phases and chemical compositions. On the 'Mo side', a MoSex layer was evidenced with increased thickness for higher annealing temperature. On the 'CIGS side', XPS highlighted a continuous Ga enrichment and a Cu content decrease with increasing temperature. Na was detected on both Mo and CIGS sides. Its concentration and distribution relied on the temperature. Finally, relationships between interface modifications and annealing temperature were discussed.

Original languageEnglish
Pages (from-to)278-281
Number of pages4
JournalMaterials Letters
Volume136
DOIs
Publication statusPublished - 2014 Dec 1

Keywords

  • Interfaces
  • Raman
  • Solar energy materials
  • Sputtering
  • Thin films
  • XPS

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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    Han, J., Ouyang, L., Zhuang, D., Liao, C., Liu, J., Zhao, M., Cha, L. M., & Besland, M. P. (2014). Raman and XPS studies of CIGS/Mo interfaces under various annealing temperatures. Materials Letters, 136, 278-281. https://doi.org/10.1016/j.matlet.2014.08.087