Raman active high energy excitations in URu2Si2

Jonathan Buhot, Yann Gallais, Maximilien Cazayous, Alain Sacuto, Przemysław Piekarz, Gérard Lapertot, Dai Aoki, Marie Aude Méasson

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have performed Raman scattering measurements on URu2Si2 single crystals on a large energy range up to ∼1300 cm−1 and in all the Raman active symmetries as a function of temperature down to 15 K. A large excitation, active only in the Eg symmetry, is reported. It has been assigned to a crystal electric field excitation on the Uranium site. We discuss how this constrains the crystal electric field scheme of the Uranium ions. Furthermore, three excitations in the A1g symmetry are observed. They have been associated to double Raman phonon processes consistently with ab initio calculations of the phonons dispersion.

Original languageEnglish
Pages (from-to)19-22
Number of pages4
JournalPhysica B: Condensed Matter
Volume506
DOIs
Publication statusPublished - 2017 Feb 1

Keywords

  • Crystal electric field (CEF)
  • Exotic electronic order
  • Heavy fermions
  • Hidden order
  • Raman spectroscopy
  • URuSi

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Raman active high energy excitations in URu<sub>2</sub>Si<sub>2</sub>'. Together they form a unique fingerprint.

  • Cite this

    Buhot, J., Gallais, Y., Cazayous, M., Sacuto, A., Piekarz, P., Lapertot, G., Aoki, D., & Méasson, M. A. (2017). Raman active high energy excitations in URu2Si2. Physica B: Condensed Matter, 506, 19-22. https://doi.org/10.1016/j.physb.2016.10.034