Radio frequency reflectometry and charge sensing of a precision placed donor in silicon

Samuel J. Hile, Matthew G. House, Eldad Peretz, Jan Verduijn, Daniel Widmann, Takashi Kobayashi, Sven Rogge, Michelle Y. Simmons

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET). By measuring the conductance through the SET and comparing this with the phase shift of the reflected radio frequency (RF) excitation from the reservoir, we can discriminate between charge transfer within the SET channel and tunneling between the donor and reservoir. The RF measurement allows observation of donor electron transitions at every charge degeneracy point in contrast to the SET conductance signal where charge transitions are only observed at triple points. The tunnel coupled reservoir has the advantage of a large effective lever arm (∼35%), allowing us to independently extract a neutral donor charging energy ∼62 ± 17 meV. These results demonstrate that we can replace three terminal transistors by a single terminal dispersive reservoir, promising for high bandwidth scalable donor control and readout.

Original languageEnglish
Article number093504
JournalApplied Physics Letters
Issue number9
Publication statusPublished - 2015 Aug 31
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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