Abstract
The radiation-induced changes in the volume electrical conductivities of chemical vapor deposited silicon carbides (CVD-SiCs) were in-site investigated by performing irradiation using 1.17 and 1.33-MeV gamma-ray and 14-MeV fast neutron beams in air and vacuum. Under gamma-ray irradiation at ionization dose rates of 3.6 and 5.9 Gy/s and irradiation temperature of approximately 300 K, the initial rapid increase in electrical conductivity; this is indicative of radiation-induced conductivity (RIC), occurred due to electronic excitation, and a more gradual increase followed up to a dose of approximately 10-50 kGy corresponding to the results in base conductivity without radiation; this is indicative of radiation-induced electrical degradation (RIED). However, the radiation-induced phenomena were not observed at irradiation temperatures above 373 K. Under neutron irradiation at a further low dose rate below approximately 2.1 Gy/s, a fast neutron flux of 9.2 × 1014 n/m2 s, and 300 K, the RIED-like behavior according to radiation-induced modification of the electrical property occurred with essentially no displacement damage, but ionizing effects (radiolysis).
Original language | English |
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Pages (from-to) | 2487-2490 |
Number of pages | 4 |
Journal | Fusion Engineering and Design |
Volume | 86 |
Issue number | 9-11 |
DOIs | |
Publication status | Published - 2011 Oct 1 |
Keywords
- Electrical conductivity
- Fast neutron irradiation
- Gamma ray irradiation
- Radiation-induced conductivity
- Radiation-induced electrical degradation
- Silicon carbide
ASJC Scopus subject areas
- Civil and Structural Engineering
- Nuclear Energy and Engineering
- Materials Science(all)
- Mechanical Engineering