Radiation imaging with a new scintillator and a CMOS camera

S. Kurosawa, Y. Shoji, Jan Pejchal, Y. Yokota, A. Yoshikawa

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new imaging system consisting of a high-sensitivity complementary metal-oxide semiconductor (CMOS) sensor, a microscope and a new scintillator, Ce-doped Gd3(Al,Ga)5O12 (Ce:GAGG) grown by the Czochralski process, has been developed. The noise, the dark current and the sensitivity of the CMOS camera (ORCA-Flash4.0, Hamamatsu) was revised and compared to a conventional CMOS, whose sensitivity is at the same level as that of a charge coupled device (CCD) camera. Without the scintillator, this system had a good position resolution of 2.1 ± 0.4 μm and we succeeded in obtaining the alpha-ray images using 1-mm thick Ce:GAGG crystal. This system can be applied for example to high energy X-ray beam profile monitor, etc.

Original languageEnglish
Article numberC07015
JournalJournal of Instrumentation
Volume9
Issue number7
DOIs
Publication statusPublished - 2014 Jul 1

Keywords

  • Image processing
  • Scintillators
  • scintillation and light emission processes (solid gas and liquid scintillators)

ASJC Scopus subject areas

  • Mathematical Physics
  • Instrumentation

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