Radiation hardness of VA1 with submicron process technology

M. Yokoyama, H. Aihara, M. Hazumi, H. Ishino, J. Kaneko, Y. Li, D. Marlow, S. Mikkelsen, E. Nygård, H. Tajima, J. Talebi, G. Varner, H. Yamamoto

Research output: Contribution to journalConference article

25 Citations (Scopus)

Abstract

We have studied the radiation hardness of the VA1, a Viking-architecture preamplifier VLSI chip. Large-scale integrated (LSI) samples are fabricated in 0.8 and 0.35 μm process technologies to improve the radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8-μm technology compared to 1.2-μm technology. Little degradation of noise and gain is observed up to a total dose of 20 Mrd for the VA1 fabricated in the 0.35-μm technology. We find that the radiation hardness improves with a scaling of better than tox-6 (tox: oxide thickness). Basic parameters of MOSFETs are also studied to understand the mechanism of radiation damage in the VA1.

Original languageEnglish
Pages (from-to)440-443
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume48
Issue number3 I
DOIs
Publication statusPublished - 2001 Jun 1
Externally publishedYes
Event2000 Nuclear Science Symphosium (NSS) - Lyon, France
Duration: 2000 Oct 152000 Oct 20

Keywords

  • Integrated circuit radiation effects
  • MOS analog integrated circuits
  • Radiation detector circuits
  • Radiation hardening
  • Silicon radiation detectors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Yokoyama, M., Aihara, H., Hazumi, M., Ishino, H., Kaneko, J., Li, Y., Marlow, D., Mikkelsen, S., Nygård, E., Tajima, H., Talebi, J., Varner, G., & Yamamoto, H. (2001). Radiation hardness of VA1 with submicron process technology. IEEE Transactions on Nuclear Science, 48(3 I), 440-443. https://doi.org/10.1109/23.940096