Radiation-hardness of VA1 with sub-micron process technology

M. Yokoyama, H. Aihara, M. Hazumi, H. Ishino, J. Kaneko, Y. Li, D. Marlow, S. Mikkelsen, E. Nygård, H. Tajima, J. Talebi, G. Varner, Hitoshi Yamamoto

Research output: Contribution to conferencePaper

Abstract

We have studied the radiation hardness of the VA1. a Viking-architecture preamplifier VLSI chip. LSI samples are fabricated by 0.8 μm and 0.35 μm process technology to improve radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8 μm technology. Little degradation of noise and gain is observed to total dose of 20 MRad .for the VA1 fabricated by the 0.35 μm technology. We find that the radiation hardness improves at a scaling of better than tox -6 (tox: oxide thickness). Basic parameters of MOS FETs are also studied to understand a mechanism of the radiation damage in the VA1.

Original languageEnglish
Publication statusPublished - 2000 Dec 1
Externally publishedYes
Event2000 IEEE Nuclear Science Symposium Conference Record - Lyon, France
Duration: 2000 Oct 152000 Oct 20

Other

Other2000 IEEE Nuclear Science Symposium Conference Record
CountryFrance
CityLyon
Period00/10/1500/10/20

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Industrial and Manufacturing Engineering

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    Yokoyama, M., Aihara, H., Hazumi, M., Ishino, H., Kaneko, J., Li, Y., Marlow, D., Mikkelsen, S., Nygård, E., Tajima, H., Talebi, J., Varner, G., & Yamamoto, H. (2000). Radiation-hardness of VA1 with sub-micron process technology. Paper presented at 2000 IEEE Nuclear Science Symposium Conference Record, Lyon, France.