Radiation hardness of optoelectronic components for the optical readout of the ATLAS inner detector

S. Hou, K. Ishii, M. Itoh, Y. Sakemi, D. S. Su, T. T. Su, P. K. Teng, H. P. Yoshida

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Optical links are used for data transmission of the ATLAS inner detector in a radiation hazard environment at the Large Hadron Collider (LHC). The radiation tolerance is studied for the opto-electronics of GaAs VCSEL and epitaxial Si PIN with 30 and 70 MeV protons at CYRIC. High speed Si and GaAs PIN photo-diodes are also investigated for upgrade to super-LHC. The annealing of GaAs VCSEL by charge injection is characterized. The GaAs devices show approximately linear degradations to fluence. The dependence on proton energy is compared to the Non-Ionizing Energy Loss calculations.

Original languageEnglish
Pages (from-to)S137-S142
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume636
Issue number1 SUPPL.
DOIs
Publication statusPublished - 2011 Apr 21

Keywords

  • LHC
  • NIEL
  • Optoelectronic
  • Radiation hardness

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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