Radiation effects of double-sided silicon strip sensors

N. Tamura, T. Hatakenaka, Y. Iwata, M. Kubota, T. Ohsugi, M. Okada, Y. Unno, T. Aso, M. Ishizuka, H. Miyata, A. Ando, K. Hatanaka, Y. Mizuno, M. Goto, S. Kobayashi, A. Murakami, K. Inoue, Y. Suzuki, M. Daigo, K. YamamotoK. Yamamura

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


A series of proton-beam irradiations was performed in order to investigate the radiation damage of silicon photodiodes and double-sided silicon strip sensors. Measurements were made for the leakage current, bias resistance, interstrip isolation, annealing and responses to an infrared light pulse and β-rays. Some problems in the production of radiation-hard double-sided strip sensors were observed. However, it has been shown that most of them can be resolved by adequately designing the strip structure, the implantation density and the materials used for various parts of the sensor. It is therefore possible to obtain a double-sided silicon strip sensor which works even after charged-particle irradiation of 20 kGy.

Original languageEnglish
Pages (from-to)131-136
Number of pages6
JournalNuclear Inst. and Methods in Physics Research, A
Issue number1
Publication statusPublished - 1994 Mar 15
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


Dive into the research topics of 'Radiation effects of double-sided silicon strip sensors'. Together they form a unique fingerprint.

Cite this