Radiation damage of silicon microstrip detectors by high doses of 200 MeV electrons

T. Takahashi, M. Ukai, A. Yoshida, Y. Fujii, K. Dobashi, O. Hashimoto, K. Maeda, A. Miyamoto, T. Miyoshi, S. N. Nakamura, Y. Okayasu, T. Tamae, H. Tamura, K. Tsukada, T. Watanabe

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A single-sided N-type silicon microstrip detector (SSD) was directly irradiated by a 200 MeV electron beam in order to examine radiation hardness. The leakage current increased linearly with the fluence up to 5×10 14/cm2. The SSD efficiency began to drop at 2×1014/cm2, but was recovered by increasing the bias to 150 V and was maintained up to 3×1014/cm2. Noise figures increased slightly, but were within acceptable levels. Our results show that SSDs can operate up to a 200 MeV electron fluence of 3×1014/cm2 without any significant degradation in performance.

Original languageEnglish
Pages (from-to)328-334
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume511
Issue number3
DOIs
Publication statusPublished - 2003 Oct 1

Keywords

  • Electron beam
  • Radiation damage
  • Silicon microstrip detector

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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