Radiation damage in pure and helium-doped α-Al2O3 in the HVEM Quantitative aspects of void and aluminium precipitate formation

G. P. Pells Aere, T. Shikama

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26 Citations (Scopus)


Single crystal α-Al2O3, both pure and helium-doped, has been irradiated with 1 MV electrons in a HVEM at several temperatures in the range 880–1130 K. Voids and aluminium precipitates were found to form after electron doses of ∼ 17 and ∼40 MC m−2, respectively. The number and size distribution of both voids and aluminium precipitates were determined, and the volume fraction of both kinds of defect were found to follow a power law of dose with an exponent of 0·5–0·6. An activation energy for void formation of 0·96 ± 0·1 eV was obtained, and void swelling was found to be only slightly increased by helium doping. The activation energy for aluminium precipitate formation was found to be 1·35 ± 0·15 eV.

Original languageEnglish
Pages (from-to)779-794
Number of pages16
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Issue number5
Publication statusPublished - 1983 May

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys


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