Radiation damage effects in the NA60 silicon pixel detectors

M. Keil; K. Banicz; M. Floris; J. M. Heuser; C. Lourenço; H. Ohnishi; E. Radermacher; G. Usai

doi:10.1016/j.nima.2005.06.038

Radiation damage effects in the NA60 silicon pixel detectors

M. Keil, K. Banicz, M. Floris, J. M. Heuser, C. Lourenço, H. Ohnishi, E. Radermacher, G. Usai

Research output: Contribution to journal › Conference article › peer-review

Abstract

The NA60 experiment studies open charm and prompt dimuon production in proton-nucleus and nucleus-nucleus collisions at the CERN SPS. Downstream of the target system a silicon pixel telescope made with p-on-n silicon sensors measures the charged tracks originating from the collisions. During the 2003 data taking period with indium-indium collisions a significant radiation dose was collected. Simulations done before the run predicted a fluence of up to several 10131MeVneqcm-2 in the most affected regions of the sensors and a difference of approximately a factor ten between the inner and outer regions of certain sensor chips. The inhomogeneous distribution of the fluence leads to type inversion in some regions of the sensors while other regions of the same sensors kept their initial behaviour. The depletion voltages and leakage currents were measured during the run and have been compared with the estimates we had previously made. This paper shows simulation results of fluence and radiation damage and comparisons with the measurements performed throughout the data taking period.

Original language	English
Pages (from-to)	239-243
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	552
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nima.2005.06.038
Publication status	Published - 2005 Oct 21
Externally published	Yes
Event	Proceedings of the 5th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices - Duration: 2004 Oct 10 → 2004 Oct 13

Keywords

Pixel detector
Radiation damage
Silicon

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2005.06.038

Cite this

Radiation damage effects in the NA60 silicon pixel detectors. / Keil, M.; Banicz, K.; Floris, M.; Heuser, J. M.; Lourenço, C.; Ohnishi, H.; Radermacher, E.; Usai, G.

In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 552, No. 1-2, 21.10.2005, p. 239-243.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "The NA60 experiment studies open charm and prompt dimuon production in proton-nucleus and nucleus-nucleus collisions at the CERN SPS. Downstream of the target system a silicon pixel telescope made with p-on-n silicon sensors measures the charged tracks originating from the collisions. During the 2003 data taking period with indium-indium collisions a significant radiation dose was collected. Simulations done before the run predicted a fluence of up to several 10131MeVneqcm-2 in the most affected regions of the sensors and a difference of approximately a factor ten between the inner and outer regions of certain sensor chips. The inhomogeneous distribution of the fluence leads to type inversion in some regions of the sensors while other regions of the same sensors kept their initial behaviour. The depletion voltages and leakage currents were measured during the run and have been compared with the estimates we had previously made. This paper shows simulation results of fluence and radiation damage and comparisons with the measurements performed throughout the data taking period.",

keywords = "Pixel detector, Radiation damage, Silicon",

author = "M. Keil and K. Banicz and M. Floris and Heuser, {J. M.} and C. Louren{\c c}o and H. Ohnishi and E. Radermacher and G. Usai",

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T1 - Radiation damage effects in the NA60 silicon pixel detectors

AU - Keil, M.

AU - Banicz, K.

AU - Floris, M.

AU - Heuser, J. M.

AU - Lourenço, C.

AU - Ohnishi, H.

AU - Radermacher, E.

AU - Usai, G.

PY - 2005/10/21

Y1 - 2005/10/21

N2 - The NA60 experiment studies open charm and prompt dimuon production in proton-nucleus and nucleus-nucleus collisions at the CERN SPS. Downstream of the target system a silicon pixel telescope made with p-on-n silicon sensors measures the charged tracks originating from the collisions. During the 2003 data taking period with indium-indium collisions a significant radiation dose was collected. Simulations done before the run predicted a fluence of up to several 10131MeVneqcm-2 in the most affected regions of the sensors and a difference of approximately a factor ten between the inner and outer regions of certain sensor chips. The inhomogeneous distribution of the fluence leads to type inversion in some regions of the sensors while other regions of the same sensors kept their initial behaviour. The depletion voltages and leakage currents were measured during the run and have been compared with the estimates we had previously made. This paper shows simulation results of fluence and radiation damage and comparisons with the measurements performed throughout the data taking period.

AB - The NA60 experiment studies open charm and prompt dimuon production in proton-nucleus and nucleus-nucleus collisions at the CERN SPS. Downstream of the target system a silicon pixel telescope made with p-on-n silicon sensors measures the charged tracks originating from the collisions. During the 2003 data taking period with indium-indium collisions a significant radiation dose was collected. Simulations done before the run predicted a fluence of up to several 10131MeVneqcm-2 in the most affected regions of the sensors and a difference of approximately a factor ten between the inner and outer regions of certain sensor chips. The inhomogeneous distribution of the fluence leads to type inversion in some regions of the sensors while other regions of the same sensors kept their initial behaviour. The depletion voltages and leakage currents were measured during the run and have been compared with the estimates we had previously made. This paper shows simulation results of fluence and radiation damage and comparisons with the measurements performed throughout the data taking period.

KW - Pixel detector

KW - Radiation damage

KW - Silicon

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

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T2 - Proceedings of the 5th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices

Y2 - 10 October 2004 through 13 October 2004

ER -

Radiation damage effects in the NA60 silicon pixel detectors

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Keywords

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