Radiation damage and radiation-induced segregation in single crystal stainless steel by RBS and PIXE channeling

T. Mitamura; K. Kawatsura; T. Nakae; T. Igarashi; T. Inoue; S. Aral; Y. Aoki; S. Yamamoto; K. Narumi; H. Naramoto; Y. Horino; Y. Mokuno; K. Fujii; M. Terasawa; H. Uchida; K. Koterazawa; K. Takahiro; S. Nagata; S. Yamaguchi

doi:10.1016/S0022-3115(98)00762-4

Radiation damage and radiation-induced segregation in single crystal stainless steel by RBS and PIXE channeling

T. Mitamura, K. Kawatsura, T. Nakae, T. Igarashi, T. Inoue, S. Aral, Y. Aoki, S. Yamamoto, K. Narumi, H. Naramoto, Y. Horino, Y. Mokuno, K. Fujii, M. Terasawa, H. Uchida, K. Koterazawa, K. Takahiro, S. Nagata, S. Yamaguchi

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

Abstract

The radiation damage and the radiation-induced segregation (RIS) in type 304 austenitic stainless steel single crystal were investigated with 1.6 MeV He ion irradiation up to 2.5 × 10¹⁷ cm^-2 at RT by using RBS and PIXE with channeling conditions (RBS-C and PIXE-C). By the RBS-C experiments, it is found that radiation-induced damage for (1 1 0) orientation increased more slowly than those for (1 0 0) and (1 1 1) orientations with He ion dose. By the PIXE-C experiments, it is found that the Si atoms are displaced from the lattice sites and segregate significantly to the surfaces of (1 0 0), (1 1 0) and (1 1 1) orientations and the S atoms also seem to be enriched slightly in the (1 0 0) and (1 1 0) surfaces during He ion irradiation.

Original language	English
Pages (from-to)	21-25
Number of pages	5
Journal	Journal of Nuclear Materials
Volume	271-272
DOIs	https://doi.org/10.1016/S0022-3115(98)00762-4
Publication status	Published - 1999 May
Event	Proceedings of the 1997 8th International Conference on Fusion Reactor Materials (ICFRM-8), Part C - Sendai, Jpn Duration: 1997 Oct 26 → 1997 Oct 31

ASJC Scopus subject areas

Nuclear and High Energy Physics
Materials Science(all)
Nuclear Energy and Engineering

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Mitamura, T., Kawatsura, K., Nakae, T., Igarashi, T., Inoue, T., Aral, S., Aoki, Y., Yamamoto, S., Narumi, K., Naramoto, H., Horino, Y., Mokuno, Y., Fujii, K., Terasawa, M., Uchida, H., Koterazawa, K., Takahiro, K., Nagata, S., & Yamaguchi, S. (1999). Radiation damage and radiation-induced segregation in single crystal stainless steel by RBS and PIXE channeling. Journal of Nuclear Materials, 271-272, 21-25. https://doi.org/10.1016/S0022-3115(98)00762-4

Radiation damage and radiation-induced segregation in single crystal stainless steel by RBS and PIXE channeling. / Mitamura, T.; Kawatsura, K.; Nakae, T.; Igarashi, T.; Inoue, T.; Aral, S.; Aoki, Y.; Yamamoto, S.; Narumi, K.; Naramoto, H.; Horino, Y.; Mokuno, Y.; Fujii, K.; Terasawa, M.; Uchida, H.; Koterazawa, K.; Takahiro, K.; Nagata, S.; Yamaguchi, S.

In: Journal of Nuclear Materials, Vol. 271-272, 05.1999, p. 21-25.

Research output: Contribution to journal › Conference article › peer-review

Mitamura, T, Kawatsura, K, Nakae, T, Igarashi, T, Inoue, T, Aral, S, Aoki, Y, Yamamoto, S, Narumi, K, Naramoto, H, Horino, Y, Mokuno, Y, Fujii, K, Terasawa, M, Uchida, H, Koterazawa, K, Takahiro, K, Nagata, S & Yamaguchi, S 1999, 'Radiation damage and radiation-induced segregation in single crystal stainless steel by RBS and PIXE channeling', Journal of Nuclear Materials, vol. 271-272, pp. 21-25. https://doi.org/10.1016/S0022-3115(98)00762-4

Mitamura, T. ; Kawatsura, K. ; Nakae, T. ; Igarashi, T. ; Inoue, T. ; Aral, S. ; Aoki, Y. ; Yamamoto, S. ; Narumi, K. ; Naramoto, H. ; Horino, Y. ; Mokuno, Y. ; Fujii, K. ; Terasawa, M. ; Uchida, H. ; Koterazawa, K. ; Takahiro, K. ; Nagata, S. ; Yamaguchi, S. / Radiation damage and radiation-induced segregation in single crystal stainless steel by RBS and PIXE channeling. In: Journal of Nuclear Materials. 1999 ; Vol. 271-272. pp. 21-25.

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abstract = "The radiation damage and the radiation-induced segregation (RIS) in type 304 austenitic stainless steel single crystal were investigated with 1.6 MeV He ion irradiation up to 2.5 × 1017 cm-2 at RT by using RBS and PIXE with channeling conditions (RBS-C and PIXE-C). By the RBS-C experiments, it is found that radiation-induced damage for (1 1 0) orientation increased more slowly than those for (1 0 0) and (1 1 1) orientations with He ion dose. By the PIXE-C experiments, it is found that the Si atoms are displaced from the lattice sites and segregate significantly to the surfaces of (1 0 0), (1 1 0) and (1 1 1) orientations and the S atoms also seem to be enriched slightly in the (1 0 0) and (1 1 0) surfaces during He ion irradiation.",

author = "T. Mitamura and K. Kawatsura and T. Nakae and T. Igarashi and T. Inoue and S. Aral and Y. Aoki and S. Yamamoto and K. Narumi and H. Naramoto and Y. Horino and Y. Mokuno and K. Fujii and M. Terasawa and H. Uchida and K. Koterazawa and K. Takahiro and S. Nagata and S. Yamaguchi",

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doi = "10.1016/S0022-3115(98)00762-4",

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T1 - Radiation damage and radiation-induced segregation in single crystal stainless steel by RBS and PIXE channeling

AU - Mitamura, T.

AU - Kawatsura, K.

AU - Nakae, T.

AU - Igarashi, T.

AU - Inoue, T.

AU - Aral, S.

AU - Aoki, Y.

AU - Yamamoto, S.

AU - Narumi, K.

AU - Naramoto, H.

AU - Horino, Y.

AU - Mokuno, Y.

AU - Fujii, K.

AU - Terasawa, M.

AU - Uchida, H.

AU - Koterazawa, K.

AU - Takahiro, K.

AU - Nagata, S.

AU - Yamaguchi, S.

PY - 1999/5

Y1 - 1999/5

N2 - The radiation damage and the radiation-induced segregation (RIS) in type 304 austenitic stainless steel single crystal were investigated with 1.6 MeV He ion irradiation up to 2.5 × 1017 cm-2 at RT by using RBS and PIXE with channeling conditions (RBS-C and PIXE-C). By the RBS-C experiments, it is found that radiation-induced damage for (1 1 0) orientation increased more slowly than those for (1 0 0) and (1 1 1) orientations with He ion dose. By the PIXE-C experiments, it is found that the Si atoms are displaced from the lattice sites and segregate significantly to the surfaces of (1 0 0), (1 1 0) and (1 1 1) orientations and the S atoms also seem to be enriched slightly in the (1 0 0) and (1 1 0) surfaces during He ion irradiation.

AB - The radiation damage and the radiation-induced segregation (RIS) in type 304 austenitic stainless steel single crystal were investigated with 1.6 MeV He ion irradiation up to 2.5 × 1017 cm-2 at RT by using RBS and PIXE with channeling conditions (RBS-C and PIXE-C). By the RBS-C experiments, it is found that radiation-induced damage for (1 1 0) orientation increased more slowly than those for (1 0 0) and (1 1 1) orientations with He ion dose. By the PIXE-C experiments, it is found that the Si atoms are displaced from the lattice sites and segregate significantly to the surfaces of (1 0 0), (1 1 0) and (1 1 1) orientations and the S atoms also seem to be enriched slightly in the (1 0 0) and (1 1 0) surfaces during He ion irradiation.

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