Radiation damage and radiation-induced segregation in single crystal stainless steel by RBS and PIXE channeling

T. Mitamura, K. Kawatsura, T. Nakae, T. Igarashi, T. Inoue, S. Aral, Y. Aoki, S. Yamamoto, K. Narumi, H. Naramoto, Y. Horino, Y. Mokuno, K. Fujii, M. Terasawa, H. Uchida, K. Koterazawa, K. Takahiro, S. Nagata, S. Yamaguchi

Research output: Contribution to journalConference articlepeer-review

Abstract

The radiation damage and the radiation-induced segregation (RIS) in type 304 austenitic stainless steel single crystal were investigated with 1.6 MeV He ion irradiation up to 2.5 × 1017 cm-2 at RT by using RBS and PIXE with channeling conditions (RBS-C and PIXE-C). By the RBS-C experiments, it is found that radiation-induced damage for (1 1 0) orientation increased more slowly than those for (1 0 0) and (1 1 1) orientations with He ion dose. By the PIXE-C experiments, it is found that the Si atoms are displaced from the lattice sites and segregate significantly to the surfaces of (1 0 0), (1 1 0) and (1 1 1) orientations and the S atoms also seem to be enriched slightly in the (1 0 0) and (1 1 0) surfaces during He ion irradiation.

Original languageEnglish
Pages (from-to)21-25
Number of pages5
JournalJournal of Nuclear Materials
Volume271-272
DOIs
Publication statusPublished - 1999 May
EventProceedings of the 1997 8th International Conference on Fusion Reactor Materials (ICFRM-8), Part C - Sendai, Jpn
Duration: 1997 Oct 261997 Oct 31

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

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