TY - JOUR
T1 - Radiation damage and radiation-induced segregation in single crystal stainless steel by RBS and PIXE channeling
AU - Mitamura, T.
AU - Kawatsura, K.
AU - Nakae, T.
AU - Igarashi, T.
AU - Inoue, T.
AU - Aral, S.
AU - Aoki, Y.
AU - Yamamoto, S.
AU - Narumi, K.
AU - Naramoto, H.
AU - Horino, Y.
AU - Mokuno, Y.
AU - Fujii, K.
AU - Terasawa, M.
AU - Uchida, H.
AU - Koterazawa, K.
AU - Takahiro, K.
AU - Nagata, S.
AU - Yamaguchi, S.
N1 - Funding Information:
The authors wish to thank Dr T. Aruga and Dr S. Hamada for useful discussions. This work was supported in part by the JAERI-TIARA cooperative program of the Japan Atomic Energy Research Institute and by the inter-university cooperative research program of the Institute for Materials Research, Tohoku University.
PY - 1999/5
Y1 - 1999/5
N2 - The radiation damage and the radiation-induced segregation (RIS) in type 304 austenitic stainless steel single crystal were investigated with 1.6 MeV He ion irradiation up to 2.5 × 1017 cm-2 at RT by using RBS and PIXE with channeling conditions (RBS-C and PIXE-C). By the RBS-C experiments, it is found that radiation-induced damage for (1 1 0) orientation increased more slowly than those for (1 0 0) and (1 1 1) orientations with He ion dose. By the PIXE-C experiments, it is found that the Si atoms are displaced from the lattice sites and segregate significantly to the surfaces of (1 0 0), (1 1 0) and (1 1 1) orientations and the S atoms also seem to be enriched slightly in the (1 0 0) and (1 1 0) surfaces during He ion irradiation.
AB - The radiation damage and the radiation-induced segregation (RIS) in type 304 austenitic stainless steel single crystal were investigated with 1.6 MeV He ion irradiation up to 2.5 × 1017 cm-2 at RT by using RBS and PIXE with channeling conditions (RBS-C and PIXE-C). By the RBS-C experiments, it is found that radiation-induced damage for (1 1 0) orientation increased more slowly than those for (1 0 0) and (1 1 1) orientations with He ion dose. By the PIXE-C experiments, it is found that the Si atoms are displaced from the lattice sites and segregate significantly to the surfaces of (1 0 0), (1 1 0) and (1 1 1) orientations and the S atoms also seem to be enriched slightly in the (1 0 0) and (1 1 0) surfaces during He ion irradiation.
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U2 - 10.1016/S0022-3115(98)00762-4
DO - 10.1016/S0022-3115(98)00762-4
M3 - Conference article
AN - SCOPUS:17144468295
VL - 271-272
SP - 21
EP - 25
JO - Journal of Nuclear Materials
JF - Journal of Nuclear Materials
SN - 0022-3115
T2 - Proceedings of the 1997 8th International Conference on Fusion Reactor Materials (ICFRM-8), Part C
Y2 - 26 October 1997 through 31 October 1997
ER -