Quaternary 1T-2MTJ cell circuit for a high-density and a high-throughput nonvolatile bit-serial CAM

Shoun Matsunaga, Takahiro Hanyu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A compact quaternary cell circuit using a single MOS transistor and two magnetic tunnel junction devices (1T-2MTJ) is proposed for a high-density nonvolatile bit-serial content-addressable memory (CAM). The use of quaternary CAM-cell structure makes the search-cycle counts half, which achieves a high-speed search operation. Moreover, the power supply of a CAM word circuit is cut off whenever a mismatched cell is detected during search operation, which greatly reduces the static power dissipation. In fact, the average activation ratio of a 128-bit CAM word circuit is about 2.05 percent. The efficiency of the proposed CAM-cell structure is discussed in comparison with a conventional binary CAM-cell structure under a 0.14 um CMOS/MTJ technology.

Original languageEnglish
Title of host publicationProceedings - IEEE 42nd International Symposium on Multiple-Valued Logic, ISMVL 2012
Pages98-103
Number of pages6
DOIs
Publication statusPublished - 2012 Jul 30
Event42nd IEEE International Symposium on Multiple-Valued Logic, ISMVL 2012 - Victoria, BC, Canada
Duration: 2012 May 142012 May 16

Publication series

NameProceedings of The International Symposium on Multiple-Valued Logic
ISSN (Print)0195-623X

Other

Other42nd IEEE International Symposium on Multiple-Valued Logic, ISMVL 2012
CountryCanada
CityVictoria, BC
Period12/5/1412/5/16

Keywords

  • Compact
  • Fine-Grain
  • Logic-in-Memory
  • Low-Power
  • MOS/MTJ-hybrid
  • MTJ
  • Magnetic Tunnel Junction
  • Power Gating
  • Spintronics

ASJC Scopus subject areas

  • Computer Science(all)
  • Mathematics(all)

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