Quasi-free-standing monolayer hexagonal boron nitride on Ni

Satoru Suzuki, Yuichi Haruyama, Masahito Niibe, Takashi Tokushima, Akinobu Yamaguchi, Yuichi Utsumi, Atsushi Ito, Ryo Kadowaki, Akane Maruta, Tadashi Abukawa

Research output: Contribution to journalArticlepeer-review

Abstract

The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN π and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital hybridization between h-BN and Ni.

Original languageEnglish
Article number016304
JournalMaterials Research Express
Volume6
Issue number1
DOIs
Publication statusPublished - 2019 Jan

Keywords

  • diffusion and precipitation method
  • hexagonal boron nitride
  • photoemission electron microscopy
  • x-ray absorption spectroscopy
  • x-ray emission spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys

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