TY - JOUR
T1 - Quasi-free-standing monolayer hexagonal boron nitride on Ni
AU - Suzuki, Satoru
AU - Haruyama, Yuichi
AU - Niibe, Masahito
AU - Tokushima, Takashi
AU - Yamaguchi, Akinobu
AU - Utsumi, Yuichi
AU - Ito, Atsushi
AU - Kadowaki, Ryo
AU - Maruta, Akane
AU - Abukawa, Tadashi
N1 - Funding Information:
We thank Mr Masaya Takeuchi for his technical support with the a-BN deposition. This work was supported by JSPS KAKENHI (JP16H03835, JP16H06361).
Publisher Copyright:
© 2018 IOP Publishing Ltd.
PY - 2019/1
Y1 - 2019/1
N2 - The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN π and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital hybridization between h-BN and Ni.
AB - The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN π and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital hybridization between h-BN and Ni.
KW - diffusion and precipitation method
KW - hexagonal boron nitride
KW - photoemission electron microscopy
KW - x-ray absorption spectroscopy
KW - x-ray emission spectroscopy
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U2 - 10.1088/2053-1591/aae5b4
DO - 10.1088/2053-1591/aae5b4
M3 - Article
AN - SCOPUS:85056101588
VL - 6
JO - Materials Research Express
JF - Materials Research Express
SN - 2053-1591
IS - 1
M1 - 016304
ER -