Quarter-micron selective-epitaxial-silicon refilled trench (SRT) isolation technology with substrate shield

M. Aoki, H. Takato, S. Samata, M. Numano, A. Yagishita, K. Hieda, Akihiro Nitayama, F. Horiguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In order to realize high-density and stress-free field isolation for future ULSIs, the authors propose a selective-epitaxial-silicon refilled trench (SRT) isolation. The SRT isolation structure consists of a thin insulator film on the trench sidewalls, a selective-epitaxial-growth (SEG) silicon layer refilling the trench, and a capping oxide covering the trench openings. By using this isolation, the number of isolation process steps can be reduced to 60% of the number for a conventional process, and the stress induced by the thermal process can be minimal. The authors have succeeded in fabricating a 0.2-μ m isolation structure and have confirmed its excellent characteristics.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages447-450
Number of pages4
ISBN (Electronic)0780302435
DOIs
Publication statusPublished - 1991 Jan 1
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 1991 Dec 81991 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period91/12/891/12/11

Keywords

  • Fabrication
  • Insulation
  • Isolation technology
  • Planarization
  • Semiconductor films
  • Silicon
  • Substrates
  • Surface treatment
  • Thermal stresses
  • Ultra large scale integration

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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