Quantum well thickness dependence of spin orbit interaction in gated InP/In0.8Ga0.2As/In0.52Al0.48As asymmetric quantum wells

Makoto Kohda, Takayuki Nihei, Junsaku Nitta

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have investigated the influence of the quantum well (QW) thickness for the gate controlled Rashba spin orbit interaction (SOI) in InP/In0.8Ga0.2As/In0.52Al0.48As asymmetric QWs from the analysis of the weak antilocalization. We prepared two different samples with 5 and 10 nm In0.8Ga0.2As QWs. Gate bias dependence of the Rashba SOI parameter α shows inverse dependence between 5 and 10 nm QWs, where the α for 5 nm QW increases while that for 10 nm QW decreases with increasing the gate bias voltage. By comparing the obtained α with the interface and the field contributions of Rashba SOI calculated by the k·p formalism, the opposite dependence of the α is resulted in the enhancement of the interface contribution in 5 nm QW due to the large electron probability at the InP/In0.8Ga0.2As interface, whereas the dominant contribution for the α is originated from the In0.8Ga0.2As field contribution in 10 nm QW.

Original languageEnglish
Pages (from-to)1194-1196
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number5
DOIs
Publication statusPublished - 2008 Mar

Keywords

  • Field contribution
  • Interface contribution
  • Rashba spin orbit interaction
  • Weak antilocalization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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