Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies

Simona Achilli; Nguyen H. Le; Guido Fratesi; Nicola Manini; Giovanni Onida; Marco Turchetti; Giorgio Ferrari; Takahiro Shinada; Takashi Tanii; Enrico Prati

doi:10.1109/SNW51795.2021.00045

Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies

Simona Achilli, Nguyen H. Le, Guido Fratesi, Nicola Manini, Giovanni Onida, Marco Turchetti, Giorgio Ferrari, Takahiro Shinada, Takashi Tanii, Enrico Prati

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate the possibility to functionalize silicon vacancies through single ion implantation of Ge atoms, forming stable GeV complexes, to achieve position control of the defects and electronic properties suitable for room temperature operations. The quantum transport-measurements, supported by theoretical calculations, evidences differences compared to conventional dopants, concerning the effect of disorder and temperature on the conductivity.

Original language	English
Title of host publication	2021 Silicon Nanoelectronics Workshop, SNW 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784863487819
DOIs	https://doi.org/10.1109/SNW51795.2021.00045
Publication status	Published - 2021
Event	26th Silicon Nanoelectronics Workshop, SNW 2021 - Virtual, Online, Japan Duration: 2021 Jun 13 → …

Publication series

Name	2021 Silicon Nanoelectronics Workshop, SNW 2021

Conference

Conference	26th Silicon Nanoelectronics Workshop, SNW 2021
Country/Territory	Japan
City	Virtual, Online
Period	21/6/13 → …

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials
Hardware and Architecture

Access to Document

10.1109/SNW51795.2021.00045

Cite this

Achilli, S., Le, N. H., Fratesi, G., Manini, N., Onida, G., Turchetti, M., Ferrari, G., Shinada, T., Tanii, T., & Prati, E. (2021). Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies. In 2021 Silicon Nanoelectronics Workshop, SNW 2021 (2021 Silicon Nanoelectronics Workshop, SNW 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW51795.2021.00045

Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies. / Achilli, Simona; Le, Nguyen H.; Fratesi, Guido et al.

2021 Silicon Nanoelectronics Workshop, SNW 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 Silicon Nanoelectronics Workshop, SNW 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Achilli, S, Le, NH, Fratesi, G, Manini, N, Onida, G, Turchetti, M, Ferrari, G, Shinada, T, Tanii, T & Prati, E 2021, Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies. in 2021 Silicon Nanoelectronics Workshop, SNW 2021. 2021 Silicon Nanoelectronics Workshop, SNW 2021, Institute of Electrical and Electronics Engineers Inc., 26th Silicon Nanoelectronics Workshop, SNW 2021, Virtual, Online, Japan, 21/6/13. https://doi.org/10.1109/SNW51795.2021.00045

Achilli S, Le NH, Fratesi G, Manini N, Onida G, Turchetti M et al. Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies. In 2021 Silicon Nanoelectronics Workshop, SNW 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (2021 Silicon Nanoelectronics Workshop, SNW 2021). doi: 10.1109/SNW51795.2021.00045

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title = "Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies",

abstract = "We demonstrate the possibility to functionalize silicon vacancies through single ion implantation of Ge atoms, forming stable GeV complexes, to achieve position control of the defects and electronic properties suitable for room temperature operations. The quantum transport-measurements, supported by theoretical calculations, evidences differences compared to conventional dopants, concerning the effect of disorder and temperature on the conductivity.",

author = "Simona Achilli and Le, {Nguyen H.} and Guido Fratesi and Nicola Manini and Giovanni Onida and Marco Turchetti and Giorgio Ferrari and Takahiro Shinada and Takashi Tanii and Enrico Prati",

note = "Funding Information: ACKNOWLEDGMENTS The Authors acknowledge financial support of the Nanoscale Foundries and Fine Analysis projects - nffa.eu infrastructure under Project ID 517. Computational resources were provided by the INDACO Platform for High Performance Computing at the Universit{\`a} degli Studi di Milano http://www.indaco.unimi.it, and by CINECA through the supercomputing grant project HP10C3S9Z0. EP, TS and TT acknowledges JSPS Grant 18H03766, Ministero Affare Esteri, MEXT and CNR Short Mobility program for funding. Publisher Copyright: {\textcopyright} 2021 IEEE. All rights reserved.; 26th Silicon Nanoelectronics Workshop, SNW 2021 ; Conference date: 13-06-2021",

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doi = "10.1109/SNW51795.2021.00045",

language = "English",

series = "2021 Silicon Nanoelectronics Workshop, SNW 2021",

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AU - Onida, Giovanni

AU - Turchetti, Marco

AU - Ferrari, Giorgio

AU - Shinada, Takahiro

AU - Tanii, Takashi

AU - Prati, Enrico

N1 - Funding Information: ACKNOWLEDGMENTS The Authors acknowledge financial support of the Nanoscale Foundries and Fine Analysis projects - nffa.eu infrastructure under Project ID 517. Computational resources were provided by the INDACO Platform for High Performance Computing at the Università degli Studi di Milano http://www.indaco.unimi.it, and by CINECA through the supercomputing grant project HP10C3S9Z0. EP, TS and TT acknowledges JSPS Grant 18H03766, Ministero Affare Esteri, MEXT and CNR Short Mobility program for funding. Publisher Copyright: © 2021 IEEE. All rights reserved.

PY - 2021

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N2 - We demonstrate the possibility to functionalize silicon vacancies through single ion implantation of Ge atoms, forming stable GeV complexes, to achieve position control of the defects and electronic properties suitable for room temperature operations. The quantum transport-measurements, supported by theoretical calculations, evidences differences compared to conventional dopants, concerning the effect of disorder and temperature on the conductivity.

AB - We demonstrate the possibility to functionalize silicon vacancies through single ion implantation of Ge atoms, forming stable GeV complexes, to achieve position control of the defects and electronic properties suitable for room temperature operations. The quantum transport-measurements, supported by theoretical calculations, evidences differences compared to conventional dopants, concerning the effect of disorder and temperature on the conductivity.

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Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies

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