Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching

Yosuke Tamura, Toshiyuki Kaizu, Takayuki Kiba, Makoto Igarashi, Rikako Tsukamoto, Akio Higo, Weiguo Hu, Cedric Thomas, Mohd Erman Fauzi, Takuya Hoshii, Ichiro Yamashita, Yoshitaka Okada, Akihiro Murayama, Seiji Samukawa

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29 Citations (Scopus)

Abstract

We successfully fabricated defect-free, distributed and sub-20-nm GaAs quantum dots (named GaAs nanodisks (NDs)) by using a novel top-down technique that combines a new bio-template (PEGylated ferritin) and defect-free neutral beam etching (NBE). Greater flexibility was achieved when engineering the quantum levels of ND structures resulted in greater flexibility than that for a conventional quantum dot structure because structures enabled independent control of thickness and diameter parameters. The ND height was controlled by adjusting the deposition thickness, while the ND diameter was controlled by adjusting the hydrogen-radical treatment conditions prior to NBE. Photoluminescence emission due to carrier recombination between the ground states of GaAs NDs was observed, which showed that the emission energy shift depended on the ND diameters. Quantum level engineering due to both diameter and thickness was verified from the good agreement between the PL emission energy and the calculated quantum confinement energy.

Original languageEnglish
Article number285301
JournalNanotechnology
Volume24
Issue number28
DOIs
Publication statusPublished - 2013 Jul 19

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Tamura, Y., Kaizu, T., Kiba, T., Igarashi, M., Tsukamoto, R., Higo, A., Hu, W., Thomas, C., Fauzi, M. E., Hoshii, T., Yamashita, I., Okada, Y., Murayama, A., & Samukawa, S. (2013). Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching. Nanotechnology, 24(28), [285301]. https://doi.org/10.1088/0957-4484/24/28/285301