Quantum oscillations of Hall resistance, magnetoresistance in a magnetic field up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(Bi1-xSbx)2Te3

V. A. Kulbachinskii, A. Yu Kaminsky, R. A. Lunin, K. Kindo, Y. Narumi, K. Suga, S. Kawasaki, M. Sasaki, N. Miyajima, P. Lostak, P. Hajek

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23 Citations (Scopus)

Abstract

The Hall effect and the Shubnikov-de Haas (SdH) effect have been investigated in magnetic fields up to 54 T in p-(Bi1-xSbx)2Te3 (0 ≤ x ≤ 1.0) Sn doped single crystals. Doping of (Bi1-xSbx)2Te3 with tin has shown that Sn exhibits acceptor properties in all crystals. We discuss the valence band structure of (Bi1-xSbx)2Te3 with the upper valence band (light hole band (LHB)), the lower valence band (heavy hole band (HHB)) and Sn-induced impurity band (IB). The Hall resistivity ρH as a function of magnetic field shows quantization in the form of plateaus. The calculated Landau levels of the LHB with the best-fit parameters are in agreement with the experiment. The oscillation of ρH is due to the presence of the carrier reservoir. The impurity resonant band with a high density of states or the HHB with a higher hole effective mass serve as the reservoir.

Original languageEnglish
Pages (from-to)1133-1140
Number of pages8
JournalSemiconductor Science and Technology
Volume17
Issue number10
DOIs
Publication statusPublished - 2002 Oct

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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