TY - GEN
T1 - Quantum monte carlo study of anderson magnetic impurities in semiconductors
AU - Bulut, N.
AU - Tomoda, Y.
AU - Tanikawa, K.
AU - Takahashi, S.
AU - Maekawa, S.
N1 - Funding Information:
This work was supported by the NAREGI Nanoscience Project and a Grant-in Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, and NEDO.
Publisher Copyright:
© Springer-Verlag Berlin Heidelberg 2009.
PY - 2009
Y1 - 2009
N2 - We use quantum Monte Carlo simulations to study the electronic properties of Anderson magnetic impurities in a semiconductor host. We find that in a semiconductor the magnetic impurities exhibit ferromagnetic correlations, which can have a much longer range than in a metallic host. In particular, the range is longest when the Fermi level is located between the top of the valence band and the impurity bound state. We study the dependence of the ferromagnetic correlations on the parameters of the Anderson model, and the dimensionality and band structure of the host material. Using the tight-binding approximation for calculating the host band structure and the impurity–host hybridization, we obtain an impurity bound state, which is located at ≈100 meV above the top of the valence band, which is in agreement with the transport measurements on GaAs with dilute Mn impurities.
AB - We use quantum Monte Carlo simulations to study the electronic properties of Anderson magnetic impurities in a semiconductor host. We find that in a semiconductor the magnetic impurities exhibit ferromagnetic correlations, which can have a much longer range than in a metallic host. In particular, the range is longest when the Fermi level is located between the top of the valence band and the impurity bound state. We study the dependence of the ferromagnetic correlations on the parameters of the Anderson model, and the dimensionality and band structure of the host material. Using the tight-binding approximation for calculating the host band structure and the impurity–host hybridization, we obtain an impurity bound state, which is located at ≈100 meV above the top of the valence band, which is in agreement with the transport measurements on GaAs with dilute Mn impurities.
UR - http://www.scopus.com/inward/record.url?scp=85032929435&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85032929435&partnerID=8YFLogxK
U2 - 10.1007/978-3-540-69882-1_4
DO - 10.1007/978-3-540-69882-1_4
M3 - Conference contribution
AN - SCOPUS:85032929435
SN - 9783540698814
T3 - Springer Proceedings in Physics
SP - 67
EP - 87
BT - Advances in Nanoscale Magnetism - Proceedings of the International Conference on Nanoscale Magnetism, ICNM 2007
A2 - Mikailov, Faik
A2 - Aktas, Bekir
PB - Springer Science and Business Media, LLC
T2 - International Conference on Nanoscale Magnetism, ICNM 2007
Y2 - 25 June 2007 through 29 June 2007
ER -