Quantum-mechanical displacement sensing using InAs/AlGaSb micromechanical cantilevers

H. Yamaguchi, S. Miyashita, Y. Hirayama

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

The piezoresistance of an InAs/AlGaSb heterostructure cantilever was measured as a function of magnetic field at a liquid helium temperature. The piezoresistance showed a similar magnetic-field-dependence to that of universal conductance fluctuation, which was observed in a two-terminal resistance of the same device. This result indicates that the quantum-mechanical interference significantly modulates the piezoresistance and clearly demonstrates the possibility of highly sensitive quantum-mechanical displacement sensing, which is promising for future microelctromechanical/nanoelctromechanical applications.

Original languageEnglish
Pages (from-to)1053-1056
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume21
Issue number2-4
DOIs
Publication statusPublished - 2004 Mar
Externally publishedYes
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 2003 Jul 142003 Jul 18

Keywords

  • 2DEG
  • InAs
  • MEMS
  • NEMS
  • UCF

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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