Quantum interference effects in the magnetopiezoresistance of InAs/AlGaSb quasi-one-dimensional electron systems

H. Yamaguchi, Y. Tokura, S. Miyashia, Y. Hirayama

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14 Citations (Scopus)

Abstract

The Magnetopiezoresistance (MRP) of a micromechanical InAs/AlGaSb conductive cantilever at liquid helium temperatures were studied. The MRP curve showed aperiodic but reproducible oscillation, which were similar to the differential magnetoresistance curve obtained for the same devices. The study suggests that the quantum interference effects that cause the conductance fluctuations in the magnetoresistance were responsible for the behavior of the magnetopiezoresistance. It was also suggested that that the large change in the Piezoresistance (PR) were induced by the quantum interference in the Quasi-one-dimensional (QID) channels in the cantilever supports.

Original languageEnglish
Article number036603
Pages (from-to)036603-1-036603-4
JournalPhysical Review Letters
Volume93
Issue number3
DOIs
Publication statusPublished - 2004 Jul 16
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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