Quantum Hall effect on top and bottom surface states of topological insulator (Bi11-x Sbx)2 Te3 films

R. Yoshimi, A. Tsukazaki, Y. Kozuka, J. Falson, K. S. Takahashi, J. G. Checkelsky, N. Nagaosa, M. Kawasaki, Y. Tokura

Research output: Contribution to journalArticlepeer-review

110 Citations (Scopus)

Abstract

The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi 2 Se 3, Bi 2 Te 3, Sb 2 Te 3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in ((Bi11-x Sbx)2 Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.

Original languageEnglish
Article number6627
JournalNature communications
Volume6
DOIs
Publication statusPublished - 2015 Apr 14

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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