Quantum Hall effect on top and bottom surface states of topological insulator (Bi11-x Sbx)2 Te3 films

R. Yoshimi; A. Tsukazaki; Y. Kozuka; J. Falson; K. S. Takahashi; J. G. Checkelsky; N. Nagaosa; M. Kawasaki; Y. Tokura

doi:10.1038/ncomms7627

Quantum Hall effect on top and bottom surface states of topological insulator (Bi1_1-x Sb_x)₂ Te₃ films

R. Yoshimi, A. Tsukazaki, Y. Kozuka, J. Falson, K. S. Takahashi, J. G. Checkelsky, N. Nagaosa, M. Kawasaki, Y. Tokura

Materials Property Division

Research output: Contribution to journal › Article › peer-review

101 Citations (Scopus)

Abstract

The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi 2 Se 3, Bi 2 Te 3, Sb 2 Te 3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in ((Bi1_1-x Sb_x)₂ Te₃ films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.

Original language	English
Article number	6627
Journal	Nature communications
Volume	6
DOIs	https://doi.org/10.1038/ncomms7627
Publication status	Published - 2015 Apr 14

ASJC Scopus subject areas

Chemistry(all)
Biochemistry, Genetics and Molecular Biology(all)
Physics and Astronomy(all)

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title = "Quantum Hall effect on top and bottom surface states of topological insulator (Bi11-x Sbx)2 Te3 films",

abstract = "The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi 2 Se 3, Bi 2 Te 3, Sb 2 Te 3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in ((Bi11-x Sbx)2 Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.",

author = "R. Yoshimi and A. Tsukazaki and Y. Kozuka and J. Falson and Takahashi, {K. S.} and Checkelsky, {J. G.} and N. Nagaosa and M. Kawasaki and Y. Tokura",

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AU - Yoshimi, R.

AU - Tsukazaki, A.

AU - Kozuka, Y.

AU - Falson, J.

AU - Takahashi, K. S.

AU - Checkelsky, J. G.

AU - Nagaosa, N.

AU - Kawasaki, M.

AU - Tokura, Y.

PY - 2015/4/14

Y1 - 2015/4/14

N2 - The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi 2 Se 3, Bi 2 Te 3, Sb 2 Te 3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in ((Bi11-x Sbx)2 Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.

AB - The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi 2 Se 3, Bi 2 Te 3, Sb 2 Te 3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in ((Bi11-x Sbx)2 Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.

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