Quantum GaAs nanodisk light emitting diode fabricated by ultimate top-down neutral beam etching

Akio Higo, Takayuki Kiba, Yosuke Tamura, Cedric Thomas, Yunpeng Wang, Hassanet Sodabanlu, Junichi Takayama, Masakazu Sugiyama, Yoshiaki Nakano, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Quantum dots (QDs) photonic devices based on III-V compound semiconductor are very attractive optoelectronic due to their thermal independence, low power consumption, and high-speed modulation. We have developed a defect-free, ultimate top-down nanofabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a bio template and neutral beam etching, and produced 8-nm-thick GaAs NDs embedded in an AlGaAs barrier regrown by the metal organic vapour phase epitaxy (MOVPE). We successfully fabricated a light emitting diode structure and observed the light emission from the quantum energy levels of NDs.

Original languageEnglish
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages133-134
Number of pages2
ISBN (Electronic)9781479957217
DOIs
Publication statusPublished - 2014 Dec 16
Event2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain
Duration: 2014 Sep 72014 Sep 10

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Other

Other2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
Country/TerritorySpain
CityPalma de Mallorca
Period14/9/714/9/10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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