Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer

Yoshiaki Nakamura, Masakazu Ichikawa, Kentaro Watanabe, Yasuhiro Hatsugai

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

A scanning tunneling microscopic study revealed quantum fluctuation of tunneling currents in individual Ge quantum dots (QDs) on SiO2/Si. This was due to the charging energy change in the QDs caused by single-electron transfer from or into the QDs. The observed electron discharging time of approximately milliseconds agreed with the propagation model of the electron wave packets from the QDs to the Si substrates by a tunneling effect rather than by passing through voids in the SiO2 smaller than electron de Broglie wavelength.

Original languageEnglish
Article number153104
JournalApplied Physics Letters
Volume90
Issue number15
DOIs
Publication statusPublished - 2007 Apr 24

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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