Quantum-dot transport in carbon nanotubes

T. Ida, K. Ishibashi, K. Tsukagoshi, B. W. Alphenaar, Y. Aoyagi

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)

Abstract

Transport measurements on a bundle of single-walled carbon nanotubes have been made below 4.2 K as a function of side gate and source-drain bias voltage. The transport of an individual nanotube is described by the Coulomb blockade effect. The zero-dimensional quantum states of the nanotube become clear for measurements of large bias voltage. In addition, we present preliminary results of microwave application to the SWNT dot, and the results can be qualitatively explained by classical coupling to the dot.

Original languageEnglish
Pages (from-to)551-554
Number of pages4
JournalSuperlattices and Microstructures
Volume27
Issue number5
DOIs
Publication statusPublished - 2000 May
Externally publishedYes
Event3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA
Duration: 1999 Dec 61999 Dec 10

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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