Abstract
Transport measurements on a bundle of single-walled carbon nanotubes have been made below 4.2 K as a function of side gate and source-drain bias voltage. The transport of an individual nanotube is described by the Coulomb blockade effect. The zero-dimensional quantum states of the nanotube become clear for measurements of large bias voltage. In addition, we present preliminary results of microwave application to the SWNT dot, and the results can be qualitatively explained by classical coupling to the dot.
Original language | English |
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Pages (from-to) | 551-554 |
Number of pages | 4 |
Journal | Superlattices and Microstructures |
Volume | 27 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2000 May |
Externally published | Yes |
Event | 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA Duration: 1999 Dec 6 → 1999 Dec 10 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering