TY - GEN
T1 - Quantum dot superlattice structure for high efficiency solar cells utilizing a bio-template and damage-free neutral beam etching
AU - Samukawa, Seiji
PY - 2012
Y1 - 2012
N2 - Silicon (Si) quantum dot (QD) superlattice structures are promising candidates for all-Silicon tandem solar cells. An original top-down process involving a bio-template etching mask and damage-free neutral beam etching has been developed in order to fabricate a sub-10-nm highly ordered and dense two-dimensional (2D) array (one layer) of Si nanodisks (Si-ND) with a silicon carbide (SiC) interlayer. The Si-ND 2D array with SiC interlayer had an extremely high optical absorption coefficient and high carrier transport due to the formation of a wide miniband. As a result, high efficiency solar cells with an open-circuit voltage of 0.556 V, short-circuit current of 31.3 mA/cm 2, fill factor of 72%, and conversion efficiency of 12.6% were fabricated for the first time.
AB - Silicon (Si) quantum dot (QD) superlattice structures are promising candidates for all-Silicon tandem solar cells. An original top-down process involving a bio-template etching mask and damage-free neutral beam etching has been developed in order to fabricate a sub-10-nm highly ordered and dense two-dimensional (2D) array (one layer) of Si nanodisks (Si-ND) with a silicon carbide (SiC) interlayer. The Si-ND 2D array with SiC interlayer had an extremely high optical absorption coefficient and high carrier transport due to the formation of a wide miniband. As a result, high efficiency solar cells with an open-circuit voltage of 0.556 V, short-circuit current of 31.3 mA/cm 2, fill factor of 72%, and conversion efficiency of 12.6% were fabricated for the first time.
UR - http://www.scopus.com/inward/record.url?scp=84874885866&partnerID=8YFLogxK
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U2 - 10.1109/ICSICT.2012.6467698
DO - 10.1109/ICSICT.2012.6467698
M3 - Conference contribution
AN - SCOPUS:84874885866
SN - 9781467324724
T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Y2 - 29 October 2012 through 1 November 2012
ER -