Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

Y. Park, Y. Hirose, S. Nakao, T. Fukumura, J. Xu, T. Hasegawa

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (wBi) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λF = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (Lφ) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with wBi and t smaller than λF showed low dimensional electronic behavior at low temperatures where Lφ(T) exceed wBi or t.

Original languageEnglish
Article number023106
JournalApplied Physics Letters
Volume104
Issue number2
DOIs
Publication statusPublished - 2014 Jan 13
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses'. Together they form a unique fingerprint.

Cite this