Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

Y. Park; Y. Hirose; S. Nakao; T. Fukumura; J. Xu; T. Hasegawa

doi:10.1063/1.4861775

Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

Y. Park, Y. Hirose, S. Nakao, T. Fukumura, J. Xu, T. Hasegawa

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w_Bi) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ_F = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L_φ) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w_Bi and t smaller than λ_F showed low dimensional electronic behavior at low temperatures where L_φ(T) exceed w_Bi or t.

Original language	English
Article number	023106
Journal	Applied Physics Letters
Volume	104
Issue number	2
DOIs	https://doi.org/10.1063/1.4861775
Publication status	Published - 2014 Jan 13
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (wBi) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λF = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (Lφ) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with wBi and t smaller than λF showed low dimensional electronic behavior at low temperatures where Lφ(T) exceed wBi or t.",

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AU - Park, Y.

AU - Hirose, Y.

AU - Nakao, S.

AU - Fukumura, T.

AU - Xu, J.

AU - Hasegawa, T.

PY - 2014/1/13

Y1 - 2014/1/13

N2 - We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (wBi) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λF = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (Lφ) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with wBi and t smaller than λF showed low dimensional electronic behavior at low temperatures where Lφ(T) exceed wBi or t.

AB - We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (wBi) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λF = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (Lφ) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with wBi and t smaller than λF showed low dimensional electronic behavior at low temperatures where Lφ(T) exceed wBi or t.

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Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

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