MgO protecting layers, which have high ion induced secondary electron emission coefficient (γ), are required in order to decrease the firing voltage of plasma displays. Theoretical estimation of ideal γ value is needed for a design of better protecting layers. In this study, we report our developed γ calculation method based on a tight-binding quantum calculation and application to an estimation of γ values of MgO protecting layers. From our calculation results, it was revealed that electron trap sites arising from surface roughness would work as an effective emission sites and increase γ value. Especially for Xe+ species as induced ion, the γ value changed drastically by the presence of the trapped electron. It is also suggested that a presence of chemisorbed water on the MgO surface decreases the γ values because of the contribution of the electrons at the low energy levels originated from surface OH groups.
ASJC Scopus subject areas
- Physics and Astronomy(all)