Quantum chemical molecular dynamics study of degradation mechanism of interface integrity between a HfO2 thin film and a metal gate electrode

Tatsuya Inoue, Ken Suzuki, Hideo Miura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Control of the interfacial crystallographic structure between a dielectric film and a gate electrode is one of the most critical issues for assuring the high performance and the reliability of a stacked MOS structure using high-k dielectric thin films. In this study, quantum chemical molecular dynamics was applied to explicate the mechanism of degradation of interfacial integrity of the gate stack systems which is caused by point defects. We found that point defects such as oxygen and carbon interstitials deteriorate the electronic quality of a hafnium dioxide film and the W/HfO2 interface structure. The estimated results were confirmed by experiments using synchrotron-radiation photoemission spectroscopy.

Original languageEnglish
Title of host publicationSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs
Publication statusPublished - 2009 Dec 1
EventSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States
Duration: 2009 Sep 92009 Sep 11

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

OtherSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
CountryUnited States
CitySan Diego, CA
Period09/9/909/9/11

Keywords

  • Composition fluctuation
  • Hafnium oxide (HfO)
  • High-k dielectric
  • Metal-gate electrode
  • Quantum molecular dynamics
  • Synchrotron spectroscopy photoemission

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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