Abstract
The use of silicon-quantum-dots (Si-QDs) as floating gates in metal-oxide-semiconductor-field-effect-transistors (MOSFETs) has been attracting great attention. It has been reported that large decreases in drain current are observed within a very short time in Si-QDs memories, indicating that the collective motion of electrons occurs during electron injection into Si-QDs. In this study, we present a theoretical report which indicates that the interaction length between QDs is about 5-10 nm. From these results, we propose a mechanism for "quantum cascade multi-electron injection".
Original language | English |
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Pages (from-to) | 6199-6202 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 254 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2008 Jul 30 |
Keywords
- Electron injection
- Quantum dot
- Quantum interference
- Theory
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films