Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO 2 matrices

Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The use of silicon-quantum-dots (Si-QDs) as floating gates in metal-oxide-semiconductor-field-effect-transistors (MOSFETs) has been attracting great attention. It has been reported that large decreases in drain current are observed within a very short time in Si-QDs memories, indicating that the collective motion of electrons occurs during electron injection into Si-QDs. In this study, we present a theoretical report which indicates that the interaction length between QDs is about 5-10 nm. From these results, we propose a mechanism for "quantum cascade multi-electron injection".

Original languageEnglish
Pages (from-to)6199-6202
Number of pages4
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30

Keywords

  • Electron injection
  • Quantum dot
  • Quantum interference
  • Theory

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO <sub>2</sub> matrices'. Together they form a unique fingerprint.

Cite this