Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO                         2                          matrices

Yukihiro Takada; Masakazu Muraguchi; Kenji Shiraishi

doi:10.1016/j.apsusc.2008.02.189

Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO ₂ matrices

Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi

ENG - Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The use of silicon-quantum-dots (Si-QDs) as floating gates in metal-oxide-semiconductor-field-effect-transistors (MOSFETs) has been attracting great attention. It has been reported that large decreases in drain current are observed within a very short time in Si-QDs memories, indicating that the collective motion of electrons occurs during electron injection into Si-QDs. In this study, we present a theoretical report which indicates that the interaction length between QDs is about 5-10 nm. From these results, we propose a mechanism for "quantum cascade multi-electron injection".

Original language	English
Pages (from-to)	6199-6202
Number of pages	4
Journal	Applied Surface Science
Volume	254
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.189
Publication status	Published - 2008 Jul 30

Keywords

Electron injection
Quantum dot
Quantum interference
Theory

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO ₂ matrices . / Takada, Yukihiro; Muraguchi, Masakazu; Shiraishi, Kenji.

In: Applied Surface Science, Vol. 254, No. 19, 30.07.2008, p. 6199-6202.

Research output: Contribution to journal › Article › peer-review

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AB - The use of silicon-quantum-dots (Si-QDs) as floating gates in metal-oxide-semiconductor-field-effect-transistors (MOSFETs) has been attracting great attention. It has been reported that large decreases in drain current are observed within a very short time in Si-QDs memories, indicating that the collective motion of electrons occurs during electron injection into Si-QDs. In this study, we present a theoretical report which indicates that the interaction length between QDs is about 5-10 nm. From these results, we propose a mechanism for "quantum cascade multi-electron injection".

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KW - Quantum interference

KW - Theory

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